OPTIKA ATMOSFERY I OKEANA JOURNAL
V.E. ZUEV INSTITUTE OF ATMOSPHERIC OPTICS
Vol. 11, issue 02-03, article # 38
pdf Fattakhov Ya. V., Galyautdinov M. F., L'vova T. N., Khaibullin I. B. Dynamics of silicon melting on irradiation by incoherent high-power light pulses. // Atmospheric and oceanic optics. 1998. V. 11. No. 02-03. P. 231-235.Copy the reference to clipboard
Abstract:
For the first time the dynamics of anisotropic local melting of implanted silicon has been investigated for different regimes of light irradiation. The formation and growth of local melting zones (LMZs) on irradiation by light pulses have been recorded by a high-speed motion picture camera. For the first time the dependence of the number and size of the LMZs has been investigated in its dynamics. Additional data on the formation of defects in implanted semiconductors on irradiation by light pulses have been obtained.